A Very Low-Noise Integrated 3MM-Wave Schottky Diode Mixer and PHEMT IF Amplifier

Abstract

An integrated 3mm-wave Schottky diode mixer and pseudomorphic high-electron-mobility transistor (PHEMT) IF amplifier with record noise performance at room temperature is described. The design has shown the room-temperature double-sideband (DSB) receiver noise temperature TRDSB of 190 K at 100 GHz due to a very low conversion loss in the full-height waveguide mixer and an ultra-low noise of the PHEMT IF amplifier. The receiver noise temperature has been reduced by a factor of 1.5 in comparison with the best previously reported 3mm-wave Schottky diode mixer receiver.