Abstract
Very-high-conductivity CdTe films were prepared by co-evaporation of CdTe and In. The highest dark conductivity obtained was 103 S cm-1. It is shown that the highest conductivity film contains many In atoms doped interstitially into almost all wide space lattice points and forms a new crystal basis composed of Cd(0 0 0), Te(1/4 1/4 1/4) and In(1/2 1/2 1/2), (3/4 3/4 3/4). The interstitially doped In atoms were stable and did not move from the crystallite into the grain boundary, even when the film was heat-treated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
