A vertical optimization method for a simultaneous extraction of the five parameters characterizing the barrier height in the Mo/4H–SiC Schottky contact

Abstract

The temperature dependence of the parameters related to the barrier height inhomogeneities for Mo/4H–SiC Schottky diode in 298–498 K temperature range has been investigated. Due to the barrier height inhomogeneities that prevail at the interface of the Schottky diode, a Gaussian distribution of the barrier height is assumed. We have extracted simultaneously, for every temperature, all the parameters characterizing the barrier height such as the mean barrier height $$ \bar{\phi }_{{{\text{B}}0}} $$ , the coefficients ρ2, ρ3 quantifying the deformation of the barrier height, the corresponding temperature T0 modeling the divergence of the ideality factor n from the unity, the standard deviation of the Gaussian distribution of the barrier σs and also the series resistance Rs using a vertical optimization process on the current without any graphical extraction about ρ2, ρ3, $$ \bar{\phi }_{{{\text{B}}0}} $$ , σs and Rs. The extracted parameters like ( $$ \bar{\phi }_{{{\text{B}}0}} $$ , ρ2, ρ3, σs, Rs) were found to be a temperature dependent. Moreover, an excellent agreement was obtained between the I–V–T plots calculated with the extracted parameters using a vertical optimization process with the experimental one.