A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers

Abstract

A design of a tunnel junction (TJ) based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs layers for vertical-cavity surface-emission lasers (VCSELs) for the 1.55-μm spectral range fabricated by wafer fusion of an InAlGaAsP/InP optical cavity and wafers with AlGaAs/GaAs distributed Bragg reflectors has been suggested and tested. The presence of the oxidation-resistant InGaAs layers makes it possible to employ the molecular-beam epitaxy in all stages of the fabrication technology of VCSELs, including the overgrowth of the surface profile in the TJ layer. Owing to the Burstein–Moss effect and to the thickness minimization of the p++-InGaAs layer, it was possible to avoid a buildup of the internal optical loss. As a result, the characteristics of the thus fabricated devices are comparable with those of VCSELs having an n++-/p++-InAlGaAs TJ and a similar level of the mirror losses.