A versatile two-dimensional model for InGaAsP quantum-well semiconductor lasers

Abstract

We develop a two-dimensional semiconductor laser model suitable for the simulation of strained or lattice-matched InGaAsP lasers. An anisotropic effective mass model is introduced to compute the gain and spontaneous emission spectra of the strained layers. We demonstrate that a simplified band structure model can be used to predict such phenomenon as gain switching in materials under tensile strain. Application examples are given for the design of strained and lattice-matched lasers using the InGaAsP material system.