Abstract
AbstractThe versatile algorithms of two‐dimensional device simulation programs are studied in detail. We have separated the device simulator which is independent of the device structure and the user's analysis purpose, and the preprocessor that specifically deals with user interface. Moreover, the algorithms of the device simulator become the discretization by information obtained at the nodes only, electrode current definition at the nodes of electrodes, initial guess using two‐dimensional numerical depletion approximation, and the iterative operation of the device simulation by step design. Using these algorithms we developed a two‐dimensional device simulator UNISAS, and confirmed the validity of the versatile algorithm using an example of NMOS. Step design is used for the analysis of the avalanche phenomenon of NMOS. Solving for the two carriers, we have explained easily the flow of electrons and holes in the avalanche breakdown phenomenon. Moreover, by changing only input data, we have easily analyzed the five‐gate NMOS.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Electronics and Communications in Japan (Part II: Electronics)
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
