Abstract
Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) material to extend the capabilities of our silicon photonics platform. Depending on the application being targeted, we have developed several integration strategies for the incorporation of SiN. We present these processes, as well as key components for dedicated applications. In particular, we present the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use of SiN to realize optical phased arrays in the 800–1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications. These functionalities are demonstrated using a 200 mm complementary metal-oxide-semiconductor (CMOS)-compatible pilot line, showing the versatility and scalability of the Si-SiN platform.
Highlights
Silicon photonics offers cost-effective and scalable solutions to a wide range of mature and emerging applications, such as telecommunication and datacom [1,2,3], high-performance computing [4], quantum communications and computation [5,6,7], Light Detection And Ranging (LIDAR) (Light Detection AndRanging) [8,9,10,11], and nonlinear optics [12,13,14]
We present the fabrication processes leading to the integration of both types of silicon nitride (SiN) to the photonics platform and we show optical characterizations of basic properties of the SiN waveguides
Using a slab waveguide as a free propagation region (FPR), we describe a simple grating on a classic Rowland mounting using the following equation [39]: mλ d(sin θi + sin θm ) =
Summary
Silicon photonics offers cost-effective and scalable solutions to a wide range of mature and emerging applications, such as telecommunication and datacom [1,2,3], high-performance computing [4], quantum communications and computation [5,6,7], LIDAR For frequency comb generation in the C-band, a fundamental concern is the absorption caused by residual N–H bonds remaining in a non-stoichiometric SiN film This problem can be solved by long and high-temperature annealing [12], but this rules out compatibility with active optoelectronics devices such as photodiodes and p-n junction silicon modulators, as such a high temperature would cause undesirable dopant diffusion. Its wide wavelength transparency range make SiN a useful material for photonic applications outside the usual telecom bands, for example for the realization of integrated optical phased arrays (OPAs) for near-infrared. Si3 N4 deposition process is developed for nonlinear generation of a frequency comb in the C-band Both types of SiN are used to demonstrate two-dimensional (2D) beam steering with OPA for LIDAR application at ~900 nm.
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