Abstract

In the last years, LA-ICP-MS has become an attractive technique for analyzing solid samples from various research fields. However, application in material science is often hampered by the limited availability of appropriate certified reference materials, which are a precondition for accurate quantification. Thus, frequently in-house prepared standards are used, which match the sample's composition and include all elements of interest at the required concentration levels. However, preparing and characterizing such standards is often labor-intensive and time-consuming.This work proposes a new approach for the fabrication of matrix-matched standards based on the concept of standard addition. In the first step, the analytes of interest are homogeneously deposited onto the sample surface using liquid standards and a spraying device. For analysis, the generated thin layer is ablated simultaneously with the underlying sample. Thereby deviations in the ablation process and particle transport can be avoided. It could be shown that the developed method is highly versatile and could be easily adapted to the actual needs. Using silicon, silicon carbide, copper, aluminum, and glass as a matrix, excellent linear correlations between observed signal intensities and deposited amounts were found for the elements Zn, Ag, In, and Pb (R2 - values greater than 0.99).The method was applied to determine the content of sulfur, zinc, silver, indium, and lead in a commercial Kapton® polyimide film. The obtained results could be verified based on the homogeneously distributed sulfur by conventional liquid ICP-MS analysis after sample digestion, showing similar precision and accuracy. Lead was found to show a very inhomogeneous distribution in the Kapton® film, with concentration below the LOD at most measured locations and irregularly occurring spots with significantly higher concentrations. Finally, a quantitative depth profile of sulfur in a Kapton® film has been measured to assess the uptake of SO2 after a weathering experiment.

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