Abstract
Abstract. We describe a new procedure of solving the electrostatic potentials in the silicon film of an undoped DG SOI MOSFET structure. Starting from a model previously described in the literature by Malobabic et al. (2004), we propose the bisection method for the solution of transcendental equation giving the surface electrostatic potential of the silicon channel, as a function of the gate to source voltage and the voltage along the channel. The above calculated results are used for obtaining the charges and corresponding drain current in the DG MOSFET transistor. The entire model is implemented in Verilog A and can be used inside Cadence for the determination of the static regime of electrical circuits based on undoped symmetric DG SOI MOSFET. As a case study, a simple common-source amplifier built with such a novel device is analyzed, showing the currents and voltages present in the circuit.
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