Abstract
In this paper, a novel defected ground structure (DGS) is proposed for suppressing harmonic and increasing the output power of a voltage‐controlled oscillator (VCO) in microwave circuits. The DGS is formed with connecting in parallel two periodic structures which have different center frequencies (in a ratio of 2:3) of the stopband and provides the bandgap characteristic in certain frequency bands. Simulated and experimental results show that the microstrip line with DGS has a wide low‐pass band for the fundamental frequency and a stopband for the second harmonic with good performance. To evaluate the effects of DGS on microwave VCOs, two GaAs field‐effect transistor (FET) VCOs have been designed and fabricated. One of them has a 50Ω microstrip line with DGS at the output section, while the other has only a 50Ω straight line. Measured results show that DGS suppresses the second harmonic more than −20 dBm at the output and yields improved output power by 3 − 5%.
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