Abstract
In this paper, a two-stage power amplifier (PA) implemented in the GaAs 0.15μm pHEMT process technology for V-band applications is presented. The proposed PA adopts common-source topology for each stage and a parallel RC is inserted between stages for stability. This V-band PA achieves a measured small signal gain of 11.6dB and a saturated output power of 12.2dBm. The measured peak power added efficiency (PAE) is 7.8%, and its OP1dB is 12.3dBm. The power consumption of the proposed PA is 211mW from the 5V voltage supply.
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