A V-band Low Noise Amplifier in 90-nm CMOS by Inductive Coupling Technique

Abstract

A low-noise amplifier (LNA) with three commonsource stages designed in a 90-nm CMOS process technology for V-band applications is proposed in this conference paper. By using the coupling effect between the gate biasing inductor and source degenerative inductor, we can boost the gain and reduce the noise figure. The proposed LNA achieved a peak measured gain of 11.14 dB at 67 GHz. The measured lowest noise Figure (NF) is 4.99 dB at 67 GHz. The proposed circuit draws a 17.64 mW dc-power from a 1.2-V supply.