Abstract
This paper presents a V-band T/R amplifer-module in a SiGe:C 130nm BiCMOS technology, with f t /f max =250/340GHz. The T/R amplifer-module is a bidirectional architecture consists of IN/OUT RF switches, PA in Tx path and LNA in Rx path with a digital control circuit for hybrid phased array systems. On wafer measurements show that the designed module has a peak gain of 15.5dB and 19dB at 60GHz in Tx mode and Rx mode respectively, while maintaining wideband performance over the desired band from 57-66GHz. In Rx mode, the simulated NF is 8dB over the required band. Furthermore, an OP1dB of 10dBm in Tx mode and an IP1dB of -26dBm in Rx mode have been achieved. The T/R amplifer-module occupies 1.1mm2 area and consumes 160mW/50mW at Tx and Rx modes.
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