A Valleytronic Diamond Transistor: Electrostatic Control of Valley Currents and Charge-State Manipulation of NV Centers.

Nattakarn Suntornwipat,Kiran Kumar Kovi,Viktor Djurberg,Saman Majdi,Daniel J Twitchen,Jan Isberg,Markus Gabrysch,Ian Friel

doi:10.1021/acs.nanolett.0c04712

Nattakarn Suntornwipat, Kiran Kumar Kovi + Show 6 more

Open Access

https://doi.org/10.1021/acs.nanolett.0c04712

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Abstract

The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices requires all-electric control of long-lived valley-polarized states, without the use of strong external magnetic fields. Because of the extreme strength of the carbon–carbon bond, diamond possesses exceptionally stable valley states that provide a useful platform for valleytronic devices. Using ultrapure single-crystalline diamond, we demonstrate electrostatic control of valley currents in a dual-gate field-effect transistor, where the electrons are generated with a short ultraviolet pulse. The charge current and the valley current measured at the receiving electrodes are controlled separately by varying the gate voltages. We propose a model to interpret experimental data, based on drift-diffusion equations coupled through rate terms, with the rates computed by microscopic Monte Carlo simulations. As an application, we demonstrate valley-current charge-state modulation of nitrogen-vacancy centers.

Highlights

The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantumcomputing applications
Creation and detection of valley-polarized electrons have been achieved in several materials, such as in AlAs, where valley polarization was induced by a symmetry-breaking polarized light[3−6] and in bulk strain,[1] bismuth in MoS2 by means of by using a rotating magnetic field to modulate the population of different valleys.[7]
It is necessary to look for materials where the valley pseudospin relaxation time is exceptionally long

Summary

Introduction

The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantumcomputing applications. We demonstrate electrical control of valley transport in 3D dual-gate diamond field-effect transistors (FET), where a short UV pulse is used to generate the valleypolarized electrons.

Results

Conclusion