Abstract
We have fabricated poly-Si, Si, and Ti-silicide field emitter arrays employing in-situ vacuum encapsulated lateral field emitter structures and investigated the field emission characteristics such as turn-on voltage, emission current density, and the stability of the emission current. Although poly-Si and Si emitter exhibit almost identical turn-on voltages, the Si emitter shows a sharp turn-on characteristic compared with the poly-Si emitter. It may be caused by the uniform surface of the Si emitter. The current densities of poly-Si, and Si emitter are 0.47, 0.43 µA/tip respectively when the anode to cathode voltage is 90 V. The turn-on voltage and current density of the Ti-silicide emitter are about 31V, and 1.81 µA/tip at a VAK of 90 V. The normalized current fluctuations shows that the Ti-silicide emitter exhibits the most stable current.Our experiment shows that Ti-silicide is most promising among those three cathode materials due to its low work function, uniform surface and stable characteristics.
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