A V-Band Transceiver With Integrated Resonator and Receiver/Transmitter Antenna for Near-Field IoT

Abstract

In the emerging world of near-field Internet of Things (NF-IoT), small footprint and energy efficient wireless sensor nodes are essential components. This brief presents a V-band transceiver for NF-IoT without the conventional low noise amplifier, mixers, power amplifier, and phase-locked loop building blocks. Also, there are no external components except a battery or energy scavenger. The choice of V-band enables a small footprint and is conducive to low-power and low energy/bit. The receiver has a low-power, on–off keying detection circuit, while the transmitter is an amplitude-redistribution cross-coupled oscillator with on-chip resonator, quenched by the transmit data. The transceiver has an integrated antenna shared by the transmitter and the receiver. The design, realized in the GlobalFoundries 65-nm low-power enhanced CMOS process, occupies 2.75 mm2 of chip area and consumes 52 ${\mu }\text{W}$ in receive mode and 1 mW (10 ${\mu }\text{W}~{@}~1$ % duty cycle) in transmit mode with a data rate of 100 kb/s. For a transmitter power of −10 dBm, the receiver sensitivity is −42 dBm for a BER of 10−3.