Abstract
A stacked high-electron mobility transistor (HEMT) power amplifier (PA) has been designed and implemented in a commercial 0.1- $\mu \text{m}$ InGaAs pHEMT process to increase gain and output power at millimeter-wave frequencies. The stability problem of the stacked HEMT has been analyzed. A new layout of the stacked HEMT for improving the high frequency stability is proposed and used in the PA design. Measurements on the three-stage PA with parallel devices verify the saturated output power of 25 dBm and the maximum power added efficiency of 15% at 61 GHz, which is the highest reported output power of stacked HEMT PAs. The chip size measures 3.2 mm2 which makes this the most power dense $V$ -band amplifier reported from GaAs with 100 mW/mm2.
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