Abstract

Multiphase interleaved boost diode-capacitor (MIBD) converters, as the combination of multiphase interleaved input and voltage multiplier cells (VMCs), provide a preferred solution for both high voltage gain and high-efficiency application. This article proposes a universal zero-voltage transition (ZVT) circuit design method for a family of MIBD converters with different VMC structure and cell number. Compared with other soft-switching (SS) design methods, there is no extra voltage stress for all the semiconductor devices. An auxiliary circuit consisting of two low-voltage rating switches, two diodes, two capacitors, and one small inductor is integrated into the hard-switching (HS) two-phase interleaved boost diode-capacitor (TIBD) converters to provide zero-voltage switching (ZVS) turn-on and turn-off for the main switches and zero-current switching (ZCS) turn-off for all the diodes. Besides, the auxiliary switches turn on under ZCS. All the SS is accomplished within a wide duty cycle and power rating. From the comprehensive comparison, the constructed converters' performance exceeds that of ZVS converters published in the recent literature. Furthermore, the extendable high voltage gain, low input current ripple, low voltage stress, and simple parameter design characteristics of HS MIBD converters are also conserved. Finally, a 320-W laboratory prototype is implemented to validate the theoretical analysis.

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