Abstract

Metal halide perovskite photodetector arrays have demonstrated great potential applications in the field of integrated systems, optical communications, and health monitoring. However, the fabrication of large-scale and high-resolution device is still challenging due to their incompatibility with the polar solvents. Here, a universal fabrication strategy that utilizes ultrathin encapsulation-assisted photolithography and etching to create high-resolution photodetectors array with vertical crossbar structure is reported. This approach yields a 48 × 48 photodetector array with a resolution of 317 ppi. The device shows good imaging capability with a high on/off ratio of 3.3 × 105 and long-term working stability over 12h. Furthermore, this strategy can be applied to five different material systems, and is fully compatible with the existing photolithography and etching techniques, which are expected to have potential applications in the other high-density and solvent-sensitive devices array, including perovskite- or organic semiconductor-based memristor, light emitting diode displays, and transistors.

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