Abstract
A dual band low-noise amplifier (LNA) with matched inputs and outputs, implemented in Infineon Technologies' B7HF SiGe process, is presented. Both the single-ended inputs and outputs are matched to 50 /spl Omega/ without external elements. For the low-band (800 MHz-1 GHz), the LNA has a measured gain of 17 dB and a noise figure below 1.2 dB at 900 MHz. The high-band (1.8-2 GHz) LNA achieves a gain of 15 dB and a noise figure below 1.5 dB at 1.9 GHz. Both LNAs consume 5 mA dc current with a power supply voltage range from 2.7-3.6 V.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
