Abstract
A universal automatic and self‐powered gate driver power supply for normally‐ON SiC JFETs
Highlights
Silicon Carbide SiC power switching devices exhibit lower power losses, enable utilisation of high switching frequencies and can operate at higher temperatures (> 200◦C) compared to state-of-the-art silicon (Si) counterparts [1,2,3,4,5,6,7,8,9,10,11,12,13]
This paper presents a generic circuit concept of a universal automatic and self-powered (UASP) gate driver supply for normally-ON SiC junction-field-effect transistors (JFETs) employed in high-input-impedance circuits
The performance of the proposed UASP power supply for normally-ON SiC JFET operating in switch-mode converters has been validated experimentally using a DC/DC boost converter rated at 6 kW
Summary
Silicon Carbide SiC power switching devices exhibit lower power losses, enable utilisation of high switching frequencies and can operate at higher temperatures (> 200◦C) compared to state-of-the-art silicon (Si) counterparts [1,2,3,4,5,6,7,8,9,10,11,12,13]. From a converter performance point-of-view, the normally-ON SiC JFET exhibits a lower specific on-state resistance that results in lower conduction losses and a significantly higher saturation current [10, 22]. Normally-ON JFETs have a lower temperature coefficient compared to normally-OFF counterparts. Normally-OFF SiC JFETs require a significant gate current for if on-state losses need to be optimised.
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