Abstract
The performance of a solid-state planar nano-diode, namely self-switching diode (SSD), is improved by depositing a 100 nm-thick SiNx film with high dielectric constant (high-k) into the insulating nano-trenches. The SiNx film grown by using plasma-enhanced chemical vapour deposition can enhance the electric field coupling over the trenches and thus increase the accumulated charges for field effect. In this case, the current–voltage nonlinearity is improved significantly and the responsivity of high-frequency rectification is also increased by a factor of almost one order up to 100 GHz. In addition, compared to the device without SiNx coating, the low frequency noise of the proposed diode is suppressed dramatically. The improved responsivity and noise-equivalent power of 11 SSDs in parallel with SiNx coating are 110 V W−1 at 50 GHz and 180 pW Hz−1/2, which are comparable to the state-of-the-art data of reported SSD arrays.
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