Abstract
A unified modeling approach for the submicrometer MOS transistor charge/capacitance characteristics in all operation regions is presented. Development of this MOS charge model is based on the charge-density approximation to reduce the complexity of the analytical expression. To model the charge density more accurately, the conductance-degradation coefficient is determined by the derivative of drain-to-source saturation voltage with respect to gate-to-channel potential. The unified charge densities in gate, channel, and bulk regions are obtained with the assistance of the sigmoid, hyperbola, and exponential interpolation techniques. Good agreement between the measurement data and simulation results is obtained.
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