Abstract

A new small signal model for deep submicron MOSFETs is presented. It is a unified model suitable for both baseband and RF simulation, and valid in both the triode and saturation regions. The model is implemented as a macro model with parasitic elements added to the BSIM3v3 core. The model extraction methodology is analogous to the divide and conquer strategy used in computer science. This approach is superior to the traditional method of optimizing the entire model to fit the measured S-parameters. It has shown an increase in accuracy and optimization speed while reducing convergence problems caused by global optimization. Excellent agreement between measured and simulated S-parameters at different biasing conditions in the range from 50 MHz to 15 GHz has been obtained.

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