Abstract
A unified quasi-ballistic transport model is developed for single- and double-gate graphene field-effect transistors (GFETs) using the McKelvey flux theory approach. The proposed model is compact, scalable, and compatible for the simulation of I-V characteristics of GFET for all regions of device operation. The drain current equation (IDS) incorporates the formulation of quasithermal velocity, quasi-ballistic mobility of charge carrier (describe the carrier transport of 2-D material like graphene), and source/drain backscattering coefficient. This model is also capable to describe the mobility of graphene material in degenerate and nondegenerate states. The GFET with different channel lengths, widths, and oxide thicknesses is simulated using this model for single- and double-gate devices. The proposed model synchronized with experimental results and explains the peculiar transport characteristics of GFET with normalized root-mean-square error less than 9%.
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