Abstract
This paper presents a unified analytical large-signal model that includes self-heating effects. The model is applied to a single-finger AlGaAs/GaAs heterojunction bipolar transistor (HBT) and a multifinger InGaAs/GaAs HBT. The self-heating effect in the HBT is simulated as a feedback from the collector current to the base-emitter voltage. The main advantage of the circuit presented here is that additional analysis of coupling between electrical and thermal circuits is not required, as is the case with the existing models. The small-signal HBT model is implemented based on the S-parameters at multiple frequencies measured at multiple bias points. This model is verified by comparing the measured and simulated S-parameters. The large-signal model is based on the forward Gummel plot and is built over the small-signal model. This model is verified by comparing the simulated and measured dc I-V characteristics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Microwave Theory and Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
