A Unified Electrothermal Behavior Modeling Method for Both SiC MOSFET and GaN HEMT

Abstract

This article has presented a unified electrothermal behavior modeling method for both silicon carbide (SiC) metal oxide semiconductor field effect transistor ( <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> ) and gallium nitride (GaN) high electron mobility transistor (HEMT). The electrothemal behavior of these two kind of devices in both the first and the third quadrant is accurately modeled with serval compact equations. A modeling data and optimization algorithm-based parameter extraction method have been proposed to replace the previous time consuming and labor intensive one. The proposed parameter fitting algorithm is a genetic algorithm and Levenberg–Marquardt combined optimization algorithm possessing the advantages of global optimization and fast convergence speed, and modeling data can come from both datasheets and measurement. The correctness and accuracy of the proposed modeling method has been verified by simulation and experiment result. Meanwhile, it has been proved that the proposed modeling method is applicable to several commercially available SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s and GaN HEMTs.