A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation

Abstract

A unified drain current model for undoped or lightly doped symmetric double-gate and surrounding-gate MOSFETs incorporating velocity saturation effect is proposed in this paper. The unified charge-based core model for undoped or lightly doped double-gate and surrounding-gate MOSFETs is presented first based on the previously published separate models. Caughey-Thomas engineering mobility model with its exponent factor n = 2 is then integrated self-consistently into the unified drain current model development of the two device structures. Extensive two dimensional and three dimensional device simulations are performed to validate the proposed model. Good agreements of the output and transfer characteristics between the unified model and the numerical simulations are obtained for both the double-gate and surrounding-gate MOSFETs. Symmetry property of the proposed unified current model is obtained with the exponent factor n = 2 in Cauhey-Thomas Model.