Abstract

This paper presents a comprehensive <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I-V$ </tex-math></inline-formula> model for the evaluation of above threshold DC characteristics of trigate AlGaN/GaN FinFETs for both depletion and inversion mode of operations. For the depletion mode, 2DEG carrier concentration, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$n_{s}$ </tex-math></inline-formula> , is evaluated considering the trigate geometry of the device, which is then used to assess drain current <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$(I_{\text {2D}})$ </tex-math></inline-formula> for both the linear as well as the saturation region of operations. At a relatively higher gate bias, where the 2DEG is fully un-depleted, a significant rise in the drain current is observed which is associated with the creation of two additional side channels in the GaN layer of AlGaN/GaN FinFET, caused by the inversion of carriers. This component of the drain current, referred to as inversion current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{inv}$ </tex-math></inline-formula> ), is modeled using the solution of a 2D Poisson equation. The total current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{ds}$ </tex-math></inline-formula> ) is the summation of both the depletion as well as the inversion currents ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{ds} = I_{inv} + I_{\text {2D}}$ </tex-math></inline-formula> ). The developed technique is validated using experimental data and is seen to exhibit a good degree of accuracy. Therefore, the proposed model could serve as a useful tool to predict AlGaN/GaN FinFETs output and transfer characteristics.

Highlights

  • I N recent years, FinFETs have become the gold standard in the electronic industry due to their superior properties in comparison to conventional FETs [1], [2]

  • AlGaN/GaN FinFETs have the potential to further supplement FET development owing to their improved 2DEG characteristics and temperature stability [7]–[9]

  • Inversion current is given by Eq (49), wherein β is a function of the applied potentials (Vgs, Vds) of the device. In this manner, using both the depletion and inversion parts of the model simultaneously, the I − V characteristics of an AlGaN/GaN FinFET can be assessed for a wider range of applied Vgs

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Summary

INTRODUCTION

I N recent years, FinFETs have become the gold standard in the electronic industry due to their superior properties in comparison to conventional FETs [1], [2]. To model such a device, the effects of the trigate must be taken into account while evaluating the current flow between the drain and source electrodes. A comprehensive I − V model is proposed, which can predict the output and transfer characteristics of trigate AlGaN/GaN FinFETs both in the depletion as well as in the inversion mode of operations. If the gate bias is increased towards a direction which causes a reduction in the depletion, at zero depletion there is a possibility that carriers of opposite polarity from the bulk could be attracted to the semiconductor-oxide interface

AND DISCUSSION
CONCLUSION
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