Abstract
Degradations of elevated-metal metal oxide (EMMO) thin-film transistors (TFTs) under positive bias stress (PBS) and positive bias illumination stress (PBIS) are systematically investigated and compared. An intrinsic correlation between PBS and PBIS degradation is demonstrated. Continuous negative threshold voltage ( ${V}_{\text {th}}$ ) shift is observed under both stresses, with similar time-dependent $V_{\text {th}}$ shift and recovery behavior. Characterization parameters for dependencies of ${V}_{\text {th}}$ shift on both stress ${V}_{G}$ and temperature are also very close for the two degradations. PBS and PBIS degradation of EMMO TFTs and their correlation can be consistently understood based on a unified model, which emphasizes stress-induced accumulation of doubly-ionized ${V}_{O}$ traps at the back-channel interface, and is verified with simulation.
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