A Unified Approach for Modeling CVD Processes

Abstract

A modeling technique based on bond graph methods was proposed for the analysis and understanding of chemical vapor deposition (CVD) processes. In contrast with pure numerical techniques, the proposed modeling tool provides an understanding of the behavior of the process and an appreciation of interactions between the various phenomena in the system. The essential bond graph tools required for modeling any CVD system were developed. Furthermore, since the tools are not system specific, the development of a general computer program capable of modeling any complex CVD process was facilitated. The modeling power of this new method was illustrated through a study of deposition process using tetraethoxysilane. The bond graph method allowed repeated guesses at the phenomena with minimal effort and resulted in an enhanced understanding of the process. In addition, the application of the bond graph method as an analytical tool for CVD processes where the physics of the phenomena is known is illustrated through several hypothetical examples.