Abstract

A two-step annealing was performed to study the diffusion of B in the GeB- cluster ion implanted Si. Samples implanted with 15-keV, 1×1015/cm2 GeB- ion cluster were rapid thermal annealed in dry N2 at (i) 1000 °C/10sec (one-step annealing), (ii) 550 °C/300sec, and (iii) 550 °C/300sec+1000 °C/10sec (two-step annealing) respectively for comparisons. We found that the junction depth of the two-step annealed sample was only half that of the one-step annealed sample. We argue that this is due to the reduction of Si self-interstitials during the first step annealing, which consequently suppressed transient enhance diffusion (TED) significantly. The samples were also evaluated by transmission electron microscopy, RBS/Channeling and SIMS profiling. The results showed that the two-step annealing procedure led to a defect free recrystalized region with Ge atoms mostly in the substitutional sites.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.