Abstract
A two-step annealing was performed to study the diffusion of B in the GeB- cluster ion implanted Si. Samples implanted with 15-keV, 1×1015/cm2 GeB- ion cluster were rapid thermal annealed in dry N2 at (i) 1000 °C/10sec (one-step annealing), (ii) 550 °C/300sec, and (iii) 550 °C/300sec+1000 °C/10sec (two-step annealing) respectively for comparisons. We found that the junction depth of the two-step annealed sample was only half that of the one-step annealed sample. We argue that this is due to the reduction of Si self-interstitials during the first step annealing, which consequently suppressed transient enhance diffusion (TED) significantly. The samples were also evaluated by transmission electron microscopy, RBS/Channeling and SIMS profiling. The results showed that the two-step annealing procedure led to a defect free recrystalized region with Ge atoms mostly in the substitutional sites.
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