Abstract
A two-dimensional contact-type image sensor consisting of hydrogenated amorphous silicon (a Si:H) pin diodes forming an 128 × 128 array with high speed (8 frames/s) and high resolution (16 elements/mm 2) has been developed. To obtain a high signal-to-noise ratio and an excellent reproduced image, fabrication of pin diodes with 11 orders of magnitude rectification at ± 4 V and a reverse leakage current below 10 −11 A/mm 2 up to - 15 V required partial elimination of the reactive ion etching (RIE) damage. The resulting sensor showed a signal-to-noise ratio larger than 15 dB at an exposure level of 0.5 lx · s and it could reproduce an image of 200 μm wide stripe lines clearly.
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