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Abstract
The fabrication process, device profiles, and electrical characteristics of an advanced bipolar transistor with a two-step ion-implanted base (TSIB) are described. This base implant scheme has achieved a significant collector-emitter leakage yield improvement over the conventional transistor (control) which does not receive the TSIB implant. The TSIB base profile can be kept almost identical to that of the control transistors by using the selective implanted collector process. The maximum cutoff frequency of 20 GHz is measured.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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