Abstract

Mn:0.15Pb(In1/2Nb1/2)O3-0.55Pb(Mg1/3Nb2/3)O3-0.30PbTiO3 (Mn:PIMNT) pyroelectric chips were prepared by a two-step annealing method. For the two steps, annealing temperatures dependence of microstructure, defects, surface stress, surface roughness, dielectric properties and pyroelectric properties were studied comprehensively. The controlling factors influencing the pyroelectric properties of the Mn:PIMNT crystals were analyzed and the optimum annealing temperature ranges for the two steps were determined: 600–700 °C for the first step and 500–600 °C for the second step. The pyroelectric properties of the thin Mn:PIMNT chips were significantly enhanced by the two-step annealing method via tuning oxygen vacancies and eliminating surface stress. Based on Mn:PIMNT pyroelectric chips annealed at the most favorable conditions (annealed at 600 °C for the first step and 500 °C for the second step), infrared detectors were prepared with specific detectivity D* = 1.63 × 109 cmHz1/2W−1, nearly three times higher than in commercial LiTaO3 detectors.

Highlights

  • During the past few decades, pyroelectric infrared detectors have attracted extensive attention in the field of infrared detection technology due to their prominent features of high sensitivity, no requirement for cooling, wide-band frequency response, fast response speed, etc. [1,2,3,4,5,6]

  • Modified Bridgman process-developed Mn:PIMNT single crystals (nominal composition: 0.15Pb(In1/2 Nb1/2 )O3 -0.55Pb(Mg1/3 Nb2/3 )O3 -0.30PbTiO3 doped by 1 mol% Mn) were grown and cut along the [111] direction

  • The thick unannealed Mn:PIMNT crystals can be described as as-grown crystals, since the crystals have not undergone any post-treatment process

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Summary

Introduction

During the past few decades, pyroelectric infrared detectors have attracted extensive attention in the field of infrared detection technology due to their prominent features of high sensitivity, no requirement for cooling, wide-band frequency response, fast response speed, etc. [1,2,3,4,5,6]. Specific detectivity (D*), which is a form of signal-to-noise ratio, is one of the most important parameters that characterize the performance of pyroelectric infrared detectors [7,8,9]. Of pyroelectric infrared detectors: one is to improve responsivity (RV ), which is closely related to the pyroelectric coefficient (p) and heat capacity (Hp ) of the pyroelectric materials; the other is to reduce noise (N), which is dominated by different noise mechanisms under different frequencies [10,11,12]. Materials 2020, 13, 2562 affected by three figures of merit (FOMs) of the pyroelectric materials, i.e., the FOMs for current p p responsivity Fi (Fi = CV ), detectivity Fd Relaxor ferroelectric single crystals, such as Pb(Mg1/3 Nb2/3 )O3 -PbTiO3

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