Abstract
This paper presents an analytical model which correctly explains the two-dimensional (2-D) current-crowding effects observed in the cross-bridge Kelvin resistor (CBKR). The model explains that the kelvin resistance measured by this device consists of two components, one due to specific resistivity and the other due to current flowing in the overlap region between the contact and the diffusion edges. The geometrical dependence of this second component is derived analytically and compared with two-dimensional numerical simulations. It becomes significant when specific contact resistivity <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\rho_{c} < R_{s} \times \delta^{2}</tex> , where δ is the amount of overlap between edge of the contact and the edge of the diffusion path, and R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</inf> is the diffusion sheet resistance.
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