A TUNABLE MULTIBAND CMOS LNA FOR MOBILE WIMAX WITH HIGH LINEARITY

Abstract

In this paper, a multiband low-noise amplifier (LNA) with capability of band tuning is proposed to support the Mobile WiMAX (IEEE 802.16e) standard associated with a large IIP3 at RF frequencies using multi-gated linearization techniques. Proposed LNA architecture has been optimized in terms of linearity based on a comparative analysis between four tunable LNA structures. In addition, a general survey is performed on linearization techniques (multiple-gated transistors, Derivative Superposition (DS), Modified DS). Proposed LNA is constituted of multi-gated linearization technique. Design and simulations have been realized in 0.13 μm RF CMOS process considering a power supply of 1.2 V. Proposed LNA exhibits an IIP3 of +8.8 dBm, +14.3 dBm, and +6.4 dBm at the lower, middle, and upper bands of WIMAX, respectively. It results in a power gain of 10 dB, a noise figure below 2.5 dB and S11 of -11.5 dB, -8.6 dB, and -12.7 dB at the lower, middle, and upper bands. The related power dissipations are 10 mW, 9.9 mW, and 9.4 mW at the lower, middle, and upper bands, respectively.