Abstract

Visible-infrared compatible camouflage is important to increase the counter-detection ability of a target due to the fast development of detection systems. However, most of the previously reported visible-infrared compatible camouflage structures are not suitable when the temperature of targets and type of background environment change. In this paper, we propose a tunable infrared emitter composed of ZnS/Ge/Ag/Ge2Sb2Te5/Ag films and numerically demonstrate visible-infrared compatible camouflage and radiation heat dissipation. Firstly, the proposed infrared emitter can produce different structural colors as the thickness of the ZnS film changes, which can be applied to visible camouflage. Secondly, the crystallization fraction of the Ge2Sb2Te5 (GST) layer could help to engineer the average emissivity of the proposed infrared emitter, achieving tunable mid-infrared (MIR) camouflage, radiation heat dissipation, and long-infrared (LIR) camouflage in wavelength ranges of 3-5 μm, 5-8 μm, and 8-14 μm, respectively. Finally, we numerically demonstrate the visible camouflage and infrared camouflage for different application scenarios by using the simulated visible and infrared images. This work has promising application potential in visible-infrared compatible camouflage technology.

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