Abstract
We fabricated Fe(Se1−xTex) thin films on LSAT(100), MgO(001), R-Al2O3 substrates by ArF excimer pulsed laser deposition (ArF-PLD) and investigated pulse repetition rate dependence on film growth of Fe(Se1−xTex) thin films in ArF-PLD. Through x-ray diffraction measurements of Fe(Se1−xTex) thin films grown by ArF-PLD, 00l peaks of Fe(Se1−xTex) were confirmed in Fe(Se1−xTex) thin films grown by pulse repetition rate of 10 Hz but the 00l peaks were not confirmed in Fe(Se1−xTex) thin films grown at 5 Hz. Atomic force microscopy (AFM) revealed that 100 ~ 250 nm sized grains were formed on surface of the thin films grown at 10 Hz. It was found that the thin films grown at 5 Hz were formed thinner than those grown at 10 Hz, in spite of the same pulses. Energy dispersive x-ray spectroscopy (EDX) analysis revealed that composition elements of the thin films grown at 5 Hz were re-evaporated from them more than those grown at 10Hz. In ρ-T measurements of the thin films grown at 10 Hz, it was confirmed that the thin films has TConset = 6.5 ~ 10.5 K and TC0 of the Fe(Se1−xTex) thin film on an MgO substrate is 3.9 K.
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