Abstract
The drain current temperature dependence is an efficient way to determine the channel temperature in semiconductor devices; however, it has been challenging to use due to the potential interference of trapping effects. A trapping tolerant method is proposed, illustrated here for Ga2O3 MOSFETs, making in situ temperature measurements possible, allowing a thermal resistance of 59 K·mm/W to be measured in Ga2O3 MOSFETs. However, neglecting the effect of trapping causes an error of ∼15% in the channel temperature measured using the drain current. 3D simulations show that the measured channel temperature is the average temperature value between source and drain contact.
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