Abstract
Abstract A computer simulation of carrier transit pulses is employed to examine the trap-limited motion of excess carriers through semiconductor films, for the case in which the localized states are distributed over a range of energy values. It is established that these conditions result in a dispersive form of transit pulse, as frequently observed in practice, notably in the ease of amorphous specimens. Various experimental data are compared with the predictions of the model, with particular attention being paid to the transport of hole carriers in amorphous selenium. Detailed agreement is achievable between model and experiment, with realistic magnitudes for the required breadth of localized state energy distribution. For hole carriers in amorphous selenium, this amounts to a breadth of approximately 0·05 eV.
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