Abstract
A transmission electron microscope study of the twin structure in thin GaAs films grown by molecular-beam epitaxy on (111)B GaAs reveals the twinned region to be composed of three distinct crystallites which are single- and double-twin variations of the bulk crystal. A three-dimensional structure of the twin region involving variants of these crystallites, as required by the threefold symmetry of the (111)B plane, is proposed.
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