Abstract
The study has been carried out for the transient response of photosensors fabricated by amorphous semiconductors under variable levels of excitation when switched off from steady-state. The curves for the entire range of the transient have been plotted in the terms of photoconductivity and they can be converted to current decay curves by multiplying with the applied electric field and the cross-sectional area of the sample. For this purpose, in the calculations, the transit time effect is included. Also, the switching time and gain of the photoconductor have been calculated. It is found that the current gain of the device increases as the density of thermal equilibrium electrons is made higher, compared to that of holes by moving the Fermi level upward. However, this also increased the switching time and its performance, as a switch becomes poorer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
