Abstract
In the presence of a driving (laser) field of frequency ω, the probability for an electron of energy E to tunnel through a driven double-barrier diode exhibits pronounced sidebands at energies E+n ȗω, an effect which is usually referred to as photon-assisted tunneling. Recently, it has been shown by the author (1994a) that the transmission probabilities in these sidebands are strong, oscillatory functions of the driving amplitude V 1, and may in particular exhibit strong quenchings at certain values of V 1,ω. The underlying mechanism is thought to be related to the “coherent destruction of tunneling” recently predicted by (1991) for strongly driven quartic double wells.
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