Abstract
The modulation characteristics of DFB semiconductor lasers have been studied using a transfer matrix method combined with an appropriate rate equation analysis. The model takes into account longitudinal mode spatial hole burning, as well as the nonuniform current injection resulting from the axially varying Fermi voltage, and can be used for the efficient simulation of static, small-signal, and large-signal dynamic properties. The program is applied to the interpretation of experimental data from a strongly coupled InGaAsP/InP DFB laser. The experimental high-frequency properties of this device are well described by the simulations. >
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