Abstract
This letter presents a triple-8-shaped transformer-based complementary oscillator. It features tiny area, wide tuning range (TR), electromagnetic compatibility (EMC), and low flicker phase noise (PN), combining the merits of both $LC$ -tank and ring oscillators. We identify that after suppressing the second-harmonic voltage by the complementary operation itself, the third-harmonic current entering the capacitive path is now the main cause of asymmetry in the rising and falling edges, leading to the $1/f$ noise upconversion. By tuning the capacitance ratio between gate and drain nodes of the switching transistors, it mitigates the third-harmonic voltage and introduces a specific gate–drain phase shift, reducing the $1/f^{3}$ PN. Fabricated in 22-nm FDSOI CMOS, the prototype occupies an area of 0.01 mm2 and achieves $1/f^{3}$ PN corner of 70 kHz, PN of −110 dBc/Hz @1MHz and Figure-of-Merit (FoM) of −182 dB at 9 GHz, 39% TR, resulting in the best FoM with normalized TR and area (FoMTA) of −214 dB@1 MHz.
Highlights
Saving the silicon area in IC design has always been attracting intensive research
This letter proposes a complementary oscillator using a triple-8shaped transformer, featuring simultaneously tiny area (0.01 mm2), wide-tuning range (TR) (39%), low 1/f 3 phase noise (PN) corner (70 kHz), and electromagnetic compatibility (EMC)
We identify that the third-harmonic entering the capacitive path is the main cause of waveform asymmetries in a complementary oscillator since its second-harmonic voltage is suppressed by the complementary operation itself
Summary
Saving the silicon area in IC design has always been attracting intensive research This is especially true for LC-tank oscillators since the passive devices cannot scale well with the technology advancements [1]–[5]. On the other hand, benefit from the CMOS technology scaling, occupying tiny area with wide tuning range (TR) and are not susceptible to magnetic pulling. Their phase noise (PN), especially 1/f 3 PN, is much worse than in the LC-tank oscillators (see Fig. 1), significantly limiting their application in emerging low-jitter systems, e.g., high-speed PAM4 signaling or WIFI-6E.
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