Abstract
In this paper, for the first time, a circuit model for single electron box (SEB) is introduced. The main feature of the proposed model is mapping the master equation, which explains the behavior of a single electron device, to a novel circuit model. The proposed model can be utilized in a circuit simulator such as SPICE. The proposed circuit model is a time dependent model which can be used in order to calculate the intrinsic time latency of the SEB. In addition, it is able to calculate the operation of a gate circuit in high temperatures. The correct operation of the proposed model is studied by utilizing the model for simulating two digital logic gates based on the SEB. The obtained results are compared with SIMON.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
