Abstract
A general time domain analysis of the recombination currents involved in the charge pumping phenomenon occurring in a metal-oxide-semiconductor structure is presented. This analysis not only allows a better understanding of the physical origin of the charge pumping current, but also furnishes quantitative information about the charge pumping current intensity versus the frequency, shape, and amplitude of the applied gate voltage signal. A comparison between our numerical simulations and analytical models available in the literature is also conducted. In particular, the range of applicability of the Groeseneken formula is studied both for trapezoidal and triangular time dependence of the gate voltage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
