Abstract
The principle and the operation of a thyristor that can be turned on by exceeding its breakover voltage are described. The principle uses the concept of an auxiliary thyristor amplifying the small breakover current to a large gate current for the main thyristor. In this arrangement the breakover turn-on has to occur first in the auxiliary thyristor. This is ensured by a doping of the n-base of the auxiliary thyristor which is higher than that of the n-base of the main thyristor. Time resolved infrared photographs of the breakover turn-on are presented. Also, infrared photographs of the breakdown radiation from p- n- p structures are used to give a survey on the starting silicon which already contains the inhomogeneous doping.
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