A three-step model of black silicon formation in Deep Reactive Ion Etching process

Abstract

A three-step model used for modeling and simulation of black silicon formation in DRIE (Deep Reactive Ion Etching) process is presented. It divides the plasma etching system into plasma layer, sheath layer and sample surface layer. At the same time, it combines quantum mechanics, sheath dynamics and diffusion theory together based on plasma environment to predict the probability distribution of etching particles so as to simulate the final etching results. The simulation results show very good coincidence with experimental images, proving the applicability of this theory and it's promising to make black silicon formation in DRIE process to be controllable and repeatable.